IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 6

• Manufacturer Part Number: IRFP22N50APBF
• Description: MOSFET N-CH 500V 22A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP22N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 277W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 277000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP22N50APBF

IRFP22N50A, SiHFP22N50A
Vishay Siliconix
www.vishay.com
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Fig. 13a - Basic Gate Charge Waveform
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
V
G
Q
GS
Charge
Q
Q
GD
G
This datasheet is subject to change without notice.
Fig. 12d - Typical Drain-to-Source Voltage vs.
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Avalanche Current
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S11-0446-Rev. C, 14-Mar-11
Document Number: 91207
D.U.T.
I
D
+
-
V
DS