IRFP17N50LPBF Vishay, IRFP17N50LPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP17N50LPBF
• Description: MOSFET N-CH 500V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP17N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP17N50LPBF

Document Number: 91205
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Fig 7. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
I =
D
1
Drain-to-Source Voltage
16A
Gate-to-Source Voltage
30
Q , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
G
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
60
V
V
V
DS
DS
DS
Coss
Crss
Ciss
= 400V
= 250V
= 100V
90
f = 1 MHZ
100
120
150
1000
100
20
15
10
0.1
10
5
0
1
0.2
0
Fig 8. Typical Source-Drain Diode
Fig 6. Typ. Output Capacitance
V
T = 150 C
100
V DS, Drain-to-Source Voltage (V)
J
SD
Stored Energy vs. V
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
200
°
300
0.9
T = 25 C
J
400
°
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DS
1.3
V
GS
500
= 0 V
600
1.6
4