MOSFET N-CH 30V .1A SOT416

2SK3019TL

Manufacturer Part Number2SK3019TL
DescriptionMOSFET N-CH 30V .1A SOT416
ManufacturerRohm Semiconductor
2SK3019TL datasheet
 

Specifications of 2SK3019TL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 Ohm @ 10mA, 4VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C100mAVgs(th) (max) @ Id1.5V @ 100µA
Input Capacitance (ciss) @ Vds13pF @ 5VPower - Max150mW
Mounting TypeSurface MountPackage / CaseSC-75-3, SOT-416, EMT3, 3-SSMini
Transistor PolarityN ChannelContinuous Drain Current Id100mA
Drain Source Voltage Vds30VOn Resistance Rds(on)13ohm
Rds(on) Test Voltage Vgs4VVoltage Vgs Max20V
Transistor Case StyleEMTNo. OfRoHS Compliant
ConfigurationSingleResistance Drain-source Rds (on)8 Ohm @ 4 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current0.1 APower Dissipation150 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CThreshold Voltage Vgs Typ1.5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (qg) @ Vgs-Other names2SK3019TLTR
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Transistor
2.5V Drive Nch MOS FET
2SK3019
Structure
Silicon N-channel
MOSFET
Applications
Interfacing, switching (30V, 100mA)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Packaging specifications
Package
Taping
Code
TL
Type
Basic ordering unit
3000
(pieces)
2SK3019
Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Dimensions (Unit : mm)
EMT3
(1)Source
(2)Gate
(3)Drain
Symbol
Limits
Unit
V
30
V
DSS
±20
V
V
GSS
±100
I
mA
D
±400
1
I
mA
DP
2
P
150
mW
D
°C
Tch
150
−55 to +150
°C
Tstg
Symbol
Limits
°C / W
Rth(ch-a)
833
2SK3019
0.7
1.6
0.55
0.3
( 3 )
( 2 )
( 1 )
0.2
0.2
0.15
0.5
0.5
1.0
Abbreviated symbol : KN
Equivalent circuit
Gate
∗ Gate
Protection
Diode
Source
∗A pr
otection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Unit
Rev.C
Drain
1/3

2SK3019TL Summary of contents

  • Page 1

    Transistor 2.5V Drive Nch MOS FET 2SK3019 Structure Silicon N-channel MOSFET Applications Interfacing, switching (30V, 100mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can ...

  • Page 2

    Transistor Electrical characteristics (Ta=25°C) Symbol Parameter I Gate-source leakage GSS V Drain-source breakdown voltage (BR)DSS I DSS Zero gate voltage drain current V Gate threshold voltage GS(th) R Static drain-source on-state DS(on) resistance R DS(on) |Y Forward transfer admittance C ...

  • Page 3

    Transistor 9 = Pulsed 8 7 =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. ...

  • Page 4

    Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...