IRF6623 International Rectifier, IRF6623 Datasheet - Page 3

• Manufacturer Part Number: IRF6623
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6623

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1360pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6623TR

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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10000
1000
1000
1000
Fig 3. Typical Transfer Characteristics
100
100
0.1
0.1
100
10
10
1
1
Fig 1. Typical Output Characteristics
0.1
2.5
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
V DS , Drain-to-Source Voltage (V)
3.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
1
3.5
Coss
Crss
Ciss
V DS = 10V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
4.0
10
TOP
BOTTOM
4.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
5.0
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1.5
1.0
0.5
1000
100
Fig 2. Typical Output Characteristics
10
12
10
1
8
6
4
2
0
-60 -40 -20
0.1
0
I D = 15A
V GS = 10V
I D = 11A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
0
10
1
20
2.5V
V DS = 20V
VDS= 10V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60
IRF6623
80 100 120 140 160
10
20
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
3
100
30