IRF6623 International Rectifier, IRF6623 Datasheet - Page 6

• Manufacturer Part Number: IRF6623
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6623

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1360pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6623TR

DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
IRF6623
6

‚
+
R
-
D.U.T
Fig 17.
ƒ
+
-
•
•
•
•
•
•
•
HEXFET
-
„
+
®
Power MOSFETs
V
D
D
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
G
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
for N-Channel
S
S
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
D = DRAIN
G = GATE
S = SOURCE
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
www.irf.com