IRF6623 International Rectifier, IRF6623 Datasheet - Page 4

• Manufacturer Part Number: IRF6623
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6623

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1360pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6623TR

IRF6623
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1000.0
4
100.0
10.0
60
50
40
30
20
10
1.0
0.1
0
25
0.2
0.001
0.01
100
0.1
10
V SD , Source-to-Drain Voltage (V)
1
1E-006
T J , Junction Temperature (°C)
50
0.4
T J = 150°C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
75
0.20
0.10
0.05
0.02
0.01
0.6
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
T J = 25°C
100
0.8
V GS = 0V
0.0001
1.0
125
1.2
150
t 1 , Rectangular Pulse Duration (sec)
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
i/Ri
R
1
R
1
τ
2
R
τ
Fig 10. Threshold Voltage vs. Temperature
2
2
1000
R
2.5
2.0
1.5
1.0
0.1
100
2
0.1
10
1
-75
Fig 8. Maximum Safe Operating Area
R
τ
0
3
3
R
τ
3
Tc = 25°C
Tj = 150°C
Single Pulse
3
10msec
-50
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
V DS , Drain-toSource Voltage (V)
τ
R
4
-25
τ
4
R
4
1
1msec
4
T J , Temperature ( °C )
τ
τ
100µsec
C
τ
Ri (°C/W)
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
2.023
19.48
21.78
14.71
25
10
50
58
0.000678
0.240237
2.0167
τi (sec)
I D = 250µA
10
75
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100
100
125 150
100