IRF6623 International Rectifier, IRF6623 Datasheet - Page 5

• Manufacturer Part Number: IRF6623
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6623

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1360pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6623TR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance Vs. Gate Voltage
20
16
12
Fig 15a. Switching Time Test Circuit
8
4
Fig 16a. Gate Charge Test Circuit
2.0
R G
12V
20V
V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
GS
Same Type as D.U.T.
t p
Duty Factor < 0.1%
Current Regulator
Pulse Width < 1µs
4.0
.2µF
V
GS
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
0.01 Ω
L
V
.3µF
DS
I
6.0
G
T J = 25°C
T J = 125°C
D.U.T.
I
D.U.T
D
15V
L
8.0
D
DRIVER
+
I D = 15A
-
V
V
DS
DD
+
-
+
-
V DD
10.0
A
Fig 13. Maximum Avalanche Energy Vs. Drain Current
90%
Fig 14b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 15b. Switching Time Waveforms
GS
I
Fig 16b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
200
160
120
Vds
80
40
0
t
25
d(on)
Starting T J , Junction Temperature (°C)
t
r
Qgd
50
t p
75
Qgodr
t
d(off)
V
100
IRF6623
t
f
(BR)DSS
TOP
BOTTOM
Vgs
125
Id
7.9A
5.2A
12A
I D
5
150