IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 9

• Manufacturer Part Number: IRF6710S2TR1PBF
• Description: MOSFET N-CH 25V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6710S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 13V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 15 W
• Gate Charge Qg: 8.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6710S2TR1PBFTR

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET™ Part Marking
www.irf.com
™
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.08
1.70
MIN
4.75
3.70
2.75
0.35
0.48
0.58
0.48
N/A
0.80
0.68
0.020
0.08
METRIC
DIMENSIONS
1.12
1.80
MAX
4.85
3.95
2.85
0.45
0.52
0.62
0.52
N/A
0.90
0.740
0.080
0.17
N/A
0.187
0.146
0.108
0.014
0.019
0.023
0.019
0.042
0.031
0.066
0.027
0.001
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.024
0.020
0.044
N/A
0.035
0.070
0.029
0.003
0.007
MAX
9