MOSFET N-CH 30V 11A DIRECTFET

IRF6720S2TR1PBF

Manufacturer Part NumberIRF6720S2TR1PBF
DescriptionMOSFET N-CH 30V 11A DIRECTFET
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF6720S2TR1PBF datasheet
 

Specifications of IRF6720S2TR1PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 11A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C11AVgs(th) (max) @ Id2.35V @ 25µA
Gate Charge (qg) @ Vgs12nC @ 4.5VInput Capacitance (ciss) @ Vds1140pF @ 15V
Power - Max1.7WMounting TypeSurface Mount
Package / CaseDirectFET™ Isometric S1Transistor PolarityN-Channel
Resistance Drain-source Rds (on)12.8 mOhmsDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage20 VContinuous Drain Current35 A
Power Dissipation17 WGate Charge Qg7.9 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRF6720S2TR1PBFTR
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RoHS Compliant and Halogen Free 
l
Low Profile (<0.7 mm)
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Dual Sided Cooling Compatible 
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Ultra Low Package Inductance
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Optimized for High Frequency Switching 
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Ideal for CPU Core DC-DC Converters
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Optimized for Control FET Application 
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Compatible with existing Surface Mount Techniques 
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100% Rg tested
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Applicable DirectFET Outline and Substrate Outline
S1
S2
SB
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Continuous Drain Current, V
I
@ T
= 25°C
D
C
I
Pulsed Drain Current
DM
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
20
16
12
8
T J = 25°C
4
0
5
10
V GS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
V
DSS
30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V
Q
Q
g tot
7.9nC
2.8nC

M2
M4
Parameter
@ 10V
GS
@ 10V
GS
f
@ 10V
GS
g
h
Ãg
12.0
I D = 8.8A
I D = 11A
10.0
8.0
6.0
T J = 125°C
4.0
2.0
0.0
15
20
0
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
T
measured with thermocouple mounted to top (Drain) of part.
C
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
= 25°C, L = 2.0mH, R
J
IRF6720S2TRPbF
IRF6720S2TR1PbF
DirectFET™ Power MOSFET ‚
V
R
R
GS
DS(on)
DS(on)
Q
Q
Q
V
gd
gs2
rr
oss
0.9nC
14nC
5.1nC
DirectFET™ ISOMETRIC
L4
L6
L8
TM
packaging to achieve
Max.
Units
30
±20
11
9.2
35
92
77
mJ
8.8
V DS = 24V
V DS = 15V
2
4
6
8
10
12
14
16
18
Q G Total Gate Charge (nC)
= 25Ω, I
= 8.8A.
G
AS
04/30/09
gs(th)
2.0V
V
A
A
20
1

IRF6720S2TR1PBF Summary of contents

  • Page 1

    ... Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 2.0mH IRF6720S2TRPbF IRF6720S2TR1PbF DirectFET™ Power MOSFET ‚ DS(on) DS(on gs2 rr oss 0.9nC 14nC 5 ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

  • Page 3

    Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

  • Page 4

    PULSE WIDTH 0 25°C 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 15V ≤ 60µs PULSE WIDTH 175°C ...

  • Page 5

    175° 25° -40°C 0 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

  • Page 6

    Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 Fig 16. Typical Avalanche Current vs.Pulsewidth 80 TOP Single ...

  • Page 7

    DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time Test ...

  • Page 8

    D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 19. ™ 8 Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current + D.U.T. ...

  • Page 9

    Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN 4.85 A 4.75 0.187 3.95 0.146 B 3.70 2.85 C 0.108 2.75 0.45 0.014 D ...

  • Page 10

    ... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6720S2TRPBF). For 1000 parts on 7" reel, order IRF6720S2TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC ...