IRLU8113PBF International Rectifier, IRLU8113PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU8113PBF
• Description: MOSFET N-CH 30V 94A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8113PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2920pF @ 15V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8113PBF

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
3
1
4
2.5V
10
5
20µs PULSE WIDTH
Tj = 25°C
V DS = 15V
20µs PULSE WIDTH
T J = 175°C
6
TOP
BOTTOM
100
7
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
8
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
Fig 2. Typical Output Characteristics
-60 -40 -20 0
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
1
20 40 60 80 100 120 140 160 180
2.5V
20µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
100
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
3