IRLU8113PBF International Rectifier, IRLU8113PBF Datasheet - Page 5

• Manufacturer Part Number: IRLU8113PBF
• Description: MOSFET N-CH 30V 94A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8113PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2920pF @ 15V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8113PBF

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100
0.001
90
80
70
60
50
40
30
20
10
0.01
0
0.1
10
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
Case Temperature
T C , Case Temperature (°C)
75
1E-005
100
Limited By Package
125
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
175
0.001
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.5
-75 -50 -25
1. Duty factor D =
2. Peak T
Notes:
0.01
I D = 250µA
T J , Temperature ( °C )
0
J
= P
25
DM
50
x Z
t / t
1
75 100 125 150 175 200
thJC
P
2
0.1
DM
+ T
C
t
1
t
2
5
1