IRLU8113PBF International Rectifier, IRLU8113PBF Datasheet - Page 6

• Manufacturer Part Number: IRLU8113PBF
• Description: MOSFET N-CH 30V 94A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8113PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2920pF @ 15V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8113PBF

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
700
600
500
400
300
200
100
V
90%
10%
V
0
DS
GS
Fig 12c. Maximum Avalanche Energy
25
Starting T J , Junction Temperature (°C)
t
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
V
50
GS
Vs. Drain Current
t
r
V
DS
75
100
D.U.T
L
D
t
d(off)
V
TOP
BOTTOM 13A
125
DD
www.irf.com
t
f
150
I D
8.3A
9.4A
175