IRLU8113PBF International Rectifier, IRLU8113PBF Datasheet - Page 4

• Manufacturer Part Number: IRLU8113PBF
• Description: MOSFET N-CH 30V 94A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8113PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2920pF @ 15V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 89 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU8113PBF

1000.00
100.00
4
100000
10.00
10000
1.00
0.10
1000
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T J = 175°C
Drain-to-Source Voltage
C rss
C iss
C oss
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 24V
V DS = 15V
10
15
20
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10msec
100µsec
1msec
25
100
30