IRF3717 International Rectifier, IRF3717 Datasheet - Page 4

• Manufacturer Part Number: IRF3717
• Description: MOSFET N-CH 20V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3717

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2890pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3717

1000.00
100.00
100000
4
10.00
10000
1000
1.00
0.10
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
0.2
C oss
C rss
V DS , Drain-to-Source Voltage (V)
C iss
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
Forward Voltage
0.4
0.6
f = 1 MHZ
10
T J = 25°C
0.8
1.0
V GS = 0V
1.2
100
1.4
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge Vs.
T A = 25°C
Tj = 150°C
Single Pulse
I D =16A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
1
V DS = 16V
V DS = 10V
15
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10
20
1msec
10msec
100µsec
25
100
30