IRF3717 International Rectifier, IRF3717 Datasheet - Page 6

• Manufacturer Part Number: IRF3717
• Description: MOSFET N-CH 20V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3717

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2890pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3717

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2 F
t p
50K
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3 F
0.01
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
150
100
90%
V
50
10%
0
V
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
Fig 12c. Maximum Avalanche Energy
GS
25
Starting T J , Junction Temperature (°C)
t
d(on)
Duty Factor < 0.1%
50
Pulse Width < 1µs
V
GS
vs. Drain Current
t
r
V
75
DS
t
100
d(off)
TOP
BOTTOM 16A
www.irf.com
D.U.T
L
D
t
f
125
V
DD
I D
6.5A
7.5A
+
-
150