IXTA180N10T IXYS, IXTA180N10T Datasheet - Page 2

• Manufacturer Part Number: IXTA180N10T
• Description: MOSFET N-CH 100V 180A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 480W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0064
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 72
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
5mm or less from the package body.
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 90A, V
= 0.5 • V
= 10V, I
= 0V, V
= 10V, V
= 3.3Ω (External)
= 0V
= 10V, V
GS
GS
D
DS
DSS
= 60A, Note 1
DS
DS
= 0V
= 0V, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25A
= 25A
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
70
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
6900
Typ.
0.50
0.18
Typ.
110
923
162
151
5.1
33
54
42
31
39
45
72
0.31 °C/W
0.95
180
450
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
°C/W
nC
nC
nC
pF
pF
pF
μC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
3 - Source 4, TAB - Drain
3 - Source 4, TAB - Drain
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
7,005,734 B2
7,063,975 B2
IXTA180N10T
IXTP180N10T
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
2 - Drain
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Inches
0
7,157,338B2
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029