IXTA180N10T IXYS, IXTA180N10T Datasheet - Page 4

• Manufacturer Part Number: IXTA180N10T
• Description: MOSFET N-CH 100V 180A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 480W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0064
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 72
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
225
200
175
150
125
100
275
250
225
200
175
150
125
100
75
50
25
75
50
25
100
0
0
3.5
0.4
0
f
= 1 MHz
4.0
0.5
5
Fig. 9. Forward Voltage Drop of
T
J
= 150ºC
T
4.5
0.6
10
J
Fig. 7. Input Admittance
= 150ºC
Fig. 11. Capacitance
- 40ºC
Intrinsic Diode
25ºC
5.0
0.7
15
V
V
V
GS
SD
DS
- Volts
- Volts
T
- Volts
5.5
0.8
J
20
= 25ºC
6.0
0.9
25
C oss
C rss
C iss
6.5
1.0
30
7.0
1.1
35
1.2
7.5
40
1,000.0
100.0
10.0
150
135
120
105
1.0
0.1
10
90
75
60
45
30
15
9
8
7
6
5
4
3
2
1
0
0
0
0
1
R
DS(
T
T
Single Pulse
V
I
I
Fig. 12. Forward-Bias Safe Operating Area
D
G
J
C
DS
on
25
= 175ºC
= 25A
= 10mA
= 25ºC
20
)
= 50V
Limit
50
Fig. 8. Transconductance
40
10ms
75
Fig. 10. Gate Charge
Q
G
60
- NanoCoulombs
I
D
100
1ms
- Amperes
V
DC, 100ms
DS
125
80
10
- Volts
T
J
100µs
= - 40ºC
150
150ºC
25ºC
100
IXTA180N10T
IXTP180N10T
175
25µs
120
200
140
225
160
250
100