IXTA180N10T IXYS, IXTA180N10T Datasheet - Page 5

• Manufacturer Part Number: IXTA180N10T
• Description: MOSFET N-CH 100V 180A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA180N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 480W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0064
• Ciss, Typ, (pf): 6900
• Qg, Typ, (nc): 151
• Trr, Typ, (ns): 72
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
180
160
140
120
100
38
37
36
35
34
33
32
31
30
70
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
0
25
25
4
t
T
V
t
R
V
r
J
f
DS
G
DS
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
= 125ºC, V
35
= 3.3 Ω , V
= 50V
= 50V
6
Rise Time vs. Junction Temperature
I
D
30
= 25A
Fig. 17. Resistive Turn-off
45
Fig. 15. Resistive Turn-on
t
t
8
d(off)
d(on)
Fig. 13. Resistive Turn-on
GS
GS
= 10V
= 10V
55
I
I
T
- - - -
- - - -
D
D
10
J
R
35
= 50A
- Amperes
- Degrees Centigrade
G
- Ohms
65
I
12
D
= 50A
75
40
14
T
T
J
J
85
= 125ºC
= 25ºC
16
45
95
I
D
R
V
V
= 25A
GS
DS
G
18
105
= 3.3 Ω
= 10V
= 50V
50
20
115
64
61
58
55
52
49
46
43
40
75
70
65
60
55
50
45
40
35
30
125
160
140
120
100
38
37
36
35
34
33
32
31
30
80
60
40
20
70
65
60
55
50
45
40
35
30
25
20
15
10
25
Switching Times vs. Junction Temperature
2
24
t
R
V
f
G
DS
Switching Times vs. Gate Resistance
t
T
V
35
= 3.3 Ω , V
R
V
V
f
J
26
DS
= 50V
4
GS
DS
= 125ºC, V
G
= 50V
= 3.3 Ω
= 10V
= 50V
28
45
25A < I
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
t
6
d(off)
T
Rise Time vs. Drain Current
GS
30
J
Fig. 14. Resistive Turn-on
I
55
t
D
- Degrees Centigrade
d(off)
= 10V
GS
D
- - - -
= 25A, 50A
8
< 50A
32
= 10V
R
65
- - - -
G
I
10
- Ohms
34
D
- Amperes
75
25A < I
36
12
85
38
I
D
D
14
T
T
< 50A
= 25A, 50A
J
J
40
95
= 25ºC
= 125ºC
IXTA180N10T
IXTP180N10T
16
42
105
44
18
115
46
20
125
250
220
190
160
130
100
70
40
48
64
61
58
55
52
49
46
43
40
50