MOSFET N-CH 100V 160A TO-247

IXTH160N10T

Manufacturer Part NumberIXTH160N10T
DescriptionMOSFET N-CH 100V 160A TO-247
ManufacturerIXYS
SeriesTrenchMV™
IXTH160N10T datasheet
 

Specifications of IXTH160N10T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs7 mOhm @ 25A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs132nC @ 10VInput Capacitance (ciss) @ Vds6600pF @ 25V
Power - Max430WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.007 Ohms
Drain-source Breakdown Voltage100 VContinuous Drain Current160 A
Power Dissipation430 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)100Id(cont), Tc=25°c, (a)160
Rds(on), Max, Tj=25°c, (?)0.0070Ciss, Typ, (pf)6600
Qg, Typ, (nc)132Trr, Typ, (ns)100
Trr, Max, (ns)-Pd, (w)430
Rthjc, Max, (k/w)0.35Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C; R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
, di/dt ≤ 100 A/μs, V
dv/dt
I
S
DM
≤ 175°C, R
= 5 Ω
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque
d
Weight
TO-3P
TO-247
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
= 250 μA
BV
V
= 0 V, I
DSS
GS
D
= 250 μA
V
V
= V
, I
GS(th)
DS
GS
D
= ± 20 V, V
I
V
= 0 V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 25 A, Notes 1, 2
DS(on)
GS
D
© 2006 IXYS CORPORATION All rights reserved
Preliminary Technical Information
IXTH160N10T
IXTQ160N10T
Maximum Ratings
100
= 1 MΩ
100
GS
± 30
160
75
430
JM
25
500
≤ V
3
DD
DSS
430
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10 Nm/lb.in.
5.5
6
Characteristic Values
Min.
Typ.
100
2.5
± 200
T
= 150°C
J
5.8
V
= 100
DSS
I
= 160
D25
7.0 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
G
D
S
V
V
V
TO-3P (IXTQ)
A
A
A
A
mJ
G
D
V/ns
S
W
G = Gate
D = Drain
S = Source
TAB = Drain
°C
°C
°C
Features
Ultra-low On Resistance
°C
°C
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
g
175 °C Operating Temperature
g
Advantages
Easy to mount
Space savings
High power density
Max.
Applications
Automotive
V
- Motor Drives
- 42V Power Bus
4.5
V
- ABS Systems
nA
DC/DC Converters and Off-line UPS
μA
Primary Switch for 24V and 48V
5
Systems
μA
250
Distributed Power Architechtures
7.0
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
V
A
(TAB)
(TAB)
DS99710 (11/06)

IXTH160N10T Summary of contents

  • Page 1

    ... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH160N10T IXTQ160N10T Maximum Ratings 100 = 1 MΩ 100 GS ± 30 160 75 430 JM 25 500 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min ...

  • Page 2

    ... DSS D 40 0.25 Characteristic Values Min. Typ. JM 100 Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH160N10T IXTQ160N10T TO-247 AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5.3 ...

  • Page 3

    ... T - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit for TO-263 (7-Lead) 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 -50 - Degrees Centigrade C IXTH160N10T IXTQ160N10T 160A Value D = 160A 80A D 100 125 150 175 100 125 150 175 ...

  • Page 4

    ... T = 25º 1.1 1.2 1.3 1.4 1.00 C iss C oss 0.10 C rss 0.01 0.0001 IXTH160N10T IXTQ160N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance ...

  • Page 5

    ... T = 125º 10V 50V DS 130 I D 110 Ohms G Fig. 17. Resistiv e Turn-off Switching Times vs. Drain Current 125º 25º 125º Amperes D © 2006 IXYS CORPORATION All rights reserved = 5 Ω 10V 50V 105 115 125 50A 25A 140 - - - - d(off) 77 130 = 5 Ω ...