IXTH52P10P IXYS, IXTH52P10P Datasheet - Page 2

• Manufacturer Part Number: IXTH52P10P
• Description: MOSFET P-CH 100V 52A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH52P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2845pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100.00
• Id(cont), Tc=25°c, (a): -52.00
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 2845
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 120
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
(TO-3P)(TO-247)
(TO-220)
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= - 26A, V
= - 26A, -di/dt = -100A/μs
= - 50V, V
= -10V, I
= 0V, V
= -10V, V
= 3.3Ω (External)
= -10V, V
= 0V
DS
GS
D
GS
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
12
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2845
1015
- 8.9
0.21
0.50
0.53
275
120
Typ.
20
22
29
38
22
60
17
23
0.42 °C/W
Max.
- 200
- 3.5
6,404,065 B1
6,534,343
6,583,505
- 52
Max.
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2