IXTH52P10P IXYS, IXTH52P10P Datasheet - Page 4

• Manufacturer Part Number: IXTH52P10P
• Description: MOSFET P-CH 100V 52A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH52P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2845pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100.00
• Id(cont), Tc=25°c, (a): -52.00
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 2845
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 120
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-5
-5
0
0
0.0
0.0
0
-0.5
Fig. 5. R
V
-10
GS
-0.4
= -10V
-1.0
-20
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
-1.5
-0.8
-30
-2.0
Drain Current
Normalized to I
-40
I
-1.2
D
V
V
@ 125ºC
@ 25ºC
V
-2.5
DS
- Amperes
DS
GS
-50
V
- Volts
- Volts
= -10V
GS
- 9V
-3.0
-1.6
= -10V
- 9V
-60
-3.5
-70
-2.0
D
T
-4.0
J
= - 26A vs.
= 125ºC
T
J
= 25ºC
-80
- 6V
- 5V
- 8V
- 7V
-4.5
- 8V
- 7V
- 6V
- 5V
-2.4
-90
-5.0
-2.8
-100
-5.5
-130
-110
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-90
-70
-50
-30
-10
-5
0
-50
-50
0
V
Fig. 4. R
Fig. 2. Extended Output Characteristics
GS
-3
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
DS(on)
0
0
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Junction Temperature
T
-9
J
Case Temperature
- Degrees Centigrade
T
J
Normalized to I
25
25
- Degrees Centigrade
-12
V
@ 25ºC
DS
-15
I
50
50
- Volts
D
= - 52A
-18
75
75
-21
D
V
= - 26A vs.
GS
100
100
= -10V
-24
- 9V
I
D
- 8V
= - 26A
125
125
- 7V
-27
- 6V
- 5V
150
-30
150