SSM6J206FE(TE85L,F Toshiba, SSM6J206FE(TE85L,F Datasheet
SSM6J206FE(TE85L,F
Manufacturer Part Number
SSM6J206FE(TE85L,F
Description
MOSFET P-CH SGL 20V 2A SOT-563
Manufacturer
Toshiba
Datasheet
1.SSM6J206FETE85LF.pdf
(5 pages)
Specifications of SSM6J206FE(TE85L,F
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 1A, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
335pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
SSM6J206FE(TE85LFTR
○ Power Management Switch Applications
○ High-Speed Switching Applications
•
•
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
1.8 V drive
Low ON-resistance:
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note:
Note 1: Mounted on an FR4 board
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain–source forward voltage
Note 2: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
R
R
R
on
on
on
= 186 mΩ (max) (@V
= 130 mΩ (max) (@V
Pulse
= 320 mΩ (max) (@V
DC
SSM6J206FE
(Ta = 25°C)
V
V
P
R
D
Symbol
Symbol
(BR) DSS
(BR) DSX
⏐Y
V
DS (ON)
I
I
C
C
V
C
GSS
DSS
V
t
t
V
T
DSF
I
T
on
off
(Note 1)
oss
GSS
rss
iss
I
DP
th
fs
DS
stg
D
ch
⏐
I
I
V
V
V
V
I
I
I
V
V
V
V
V
I
GS
GS
GS
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
DS
DD
GS
= -1 mA, V
= -1 mA, V
= -1.0 A, V
= -0.5 A, V
= -0.2 A, V
= 2 A, V
= -2.5 V)
= -4.0 V)
= -1.8 V)
−55 to 150
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, V
= -10 V, V
= ±8 V, V
= -10 V, I
= 0 to -2.5 V, R
Rating
500
150
-20
± 8
2
-2
-4
)
1
GS
Test Condition
D
D
GS
GS
GS
GS
GS
D
DS
= 0
GS
= -1 mA
= -1 A
GS
GS
GS
= -1 A,
= 0
= +8 V
= -4 V
= -2.5 V
= -1.8 V
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
Unit
mW
= 4.7 Ω
°C
°C
V
V
A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Weight: 3 mg (typ.)
JEDEC
JEITA
TOSHIBA
ES6
Min
-0.3
-20
-12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1, 2, 5, 6 : Drain
3
4
Typ.
0.85
130
180
335
: Gate
: Source
91
70
56
20
20
SSM6J206FE
⎯
⎯
⎯
⎯
⎯
4
2-2N1A
2007-11-01
―
―
Max
-1.0
130
186
320
-10
1.2
⎯
⎯
±1
⎯
⎯
⎯
⎯
⎯
⎯
Unit: mm
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S
V
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SSM6J206FE(TE85L,F Summary of contents
Page 1
... TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8 V drive • Low ON-resistance 320 mΩ (max) (@ 186 mΩ (max) (@ 130 mΩ (max) (@V on Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain–source voltage Gate– ...
Page 2
Switching Time Test Circuit (a) Test circuit 0 IN − 2.5V 10 μs = − 4.7 Ω Duty ≦ 1% < Common Source ...
Page 3
ID - VDS -5 - -0.2 -0.4 -0.6 Drain-Source Voltage VDS (V) RDS (ON) - VGS 300 -0 -0.2 A 200 100 ...
Page 4
ID 10 Common Source VDS = - ℃ 25 ℃ ℃ -25 ℃ 1 0.1 -0.01 -0.1 -1 Drain Current ID ( VDS 1000 100 10 -0.1 -1 -10 ...
Page 5
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...