SSM6J206FE(TE85L,F Toshiba, SSM6J206FE(TE85L,F Datasheet - Page 3

• Manufacturer Part Number: SSM6J206FE(TE85L,F
• Description: MOSFET P-CH SGL 20V 2A SOT-563
• Manufacturer: Toshiba

Specifications of SSM6J206FE(TE85L,F

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 335pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6J206FE(TE85LFTR

-5
-4
-3
-2
-1
0
300
200
100
300
250
200
150
100
50
0
0
0
0
0
-0.2 A
1
-0.2
VGS = -1.8 V
-1
2
-10
ID = -1 A
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
-0.5 A
3
Drain Current ID (A)
RDS (ON) - VGS
-0.4
RDS (ON) - ID
-2
4
-4
ID - VDS
5
-2.5
-0.6
-3
6
-2.5 V
Ta = 25 ℃
7
Common Source
Common Source
Ta = 25 ℃
Common Source
Ta = 25 ℃
-4 V
-0.8
-4
8
VGS = -1.2 V
9
-1.5
-1.8
10
-5
-1
3
-0.0001
-0.001
-0.01
300
250
200
150
100
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
-0.1
-10
50
-1
-0
-1
0
-60
-25
0
Common Source
Common Source
VDS = -3 V
-0.2 -0.4
-35
0
Ta = 85 ℃
-10
25 ℃
-0.6 -0.8
Ambient Temperature Ta (℃)
25
Ambient Temperature Ta (℃)
Gate-Source Voltage VGS (V)
15
RDS (ON) - Ta
ID - VGS
Vth - Ta
50
-1
-25 ℃
40
-1.2 -1.4
VGS = -4 V, ID = -1 A
65
75
SSM6J206FE
-1.8 V, -0.2 A
-2.5 V, -0.5 A
-1.6 -1.8
90
100
2007-11-01
Common Source
ID = -1 mA
VDS = -3 V
115
-2
125
140
-2.2
150
-2.4