SSM6J206FE(TE85L,F Toshiba, SSM6J206FE(TE85L,F Datasheet - Page 4

• Manufacturer Part Number: SSM6J206FE(TE85L,F
• Description: MOSFET P-CH SGL 20V 2A SOT-563
• Manufacturer: Toshiba

Specifications of SSM6J206FE(TE85L,F

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 335pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6J206FE(TE85LFTR

0.1
1000
10
100
1
-0.01
10
1000
800
600
400
200
-0.1
0
Common Source
VDS = -3 V
Ta = 25 ℃
0
20
40
Ta = 85 ℃
Drain-Source Voltage VDS (V)
-0.1
Ambient Temperature Ta (°C)
Drain Current ID (A)
-1
60
|Yfs| - ID
C - VDS
25 ℃
PD - Ta
-25 ℃
80
100
Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
-1
-10
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 ℃
120
Coss
Crss
Ciss
140
-10
-100
160
4
0.001
0.01
1000
0.1
100
10
10
1
1
0.01
0
Common Source
VGS = 0
Ta = 25 ℃
ton
tr
tf
0.2
toff
Ta = 85 ℃
0.4
Drain-Source Voltage VDS (V)
0.1
25 ℃
Drain Current ID (A)
IDR - VDS
0.6
t - ID
-25 ℃
0.8
SSM6J206FE
1
1
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 ℃
2007-11-01
1.2
1.4
10