TPCF8B01(TE85L,F) Toshiba, TPCF8B01(TE85L,F) Datasheet
TPCF8B01(TE85L,F)
Specifications of TPCF8B01(TE85L,F)
TPCF8B01FTR
Related parts for TPCF8B01(TE85L,F)
TPCF8B01(TE85L,F) Summary of contents
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... TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current: I =-10 µA (max) (V DSS • Enhancement-model -0.5 to-1.2 V(V th • Low forward voltage ...
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Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = ...
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Electrical Characteristics MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...
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MOSFET I – −5 −2.5 −4 −4.5 −2.8 −4 −5 −3 −3.5 −3 −2 −1 Common source Ta = 25°C Pulse test 0 −0.2 −0.4 −0.6 0 Drain-source voltage – −5 ...
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R – (ON) 300 Common source −1.4 A Pulse test 250 −0 −1.8 V 200 −1 −2.7 A 150 −0.7 A 100 −2.5 V ...
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Single pulse 100 100 m Safe operating area 100 I D max (pulse ms* 10 ms* 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. V ...
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SBD i – Tj=150℃ 1 125℃ 75℃ 25℃ 0.1 0.01 0.8 0.0 0.2 0.4 0.6 Instantaneous forward voltage v F (V) Ta max – (AV) Device mounted on a glass-epoxy board(a) (Note 2a) 160 ...
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I – Pulse test 1 0.1 V =20V R 0.01 10V 5V 0.001 0.0001 100 120 Junction temperature T j (°C) (typ.) 0.06 Rectangular waveform 0° 360° 0. α ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...