AO3409 Alpha & Omega Semiconductor Inc, AO3409 Datasheet - Page 2

• Manufacturer Part Number: AO3409
• Description: MOSFET P-CH -30V -2.6A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1007-2

AO3409
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 8: Feb 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10)
(4.5)
DSS
JA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge(10V)
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
is measured with the device mounted on 1in
Parameter
J
=25° C unless otherwise noted)
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
FR-4 board with 2oz. Copper, in a still air environment with T
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
=-1A,V
GS
GS
GS
GS
GEN
=-2.6A, dI/dt=100A/ s
=-2.6A, dI/dt=100A/ s
=-250 A, V
FR-4 board with 2oz. Copper, in a still air environment with T
=-30V, V
=0V, V
=V
=-5V, I
=-4.5V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3
GS
JL
GS
I
and lead to ambient.
D
D
GS
DS
DS
=0V
=-250 A
=-2.5A
D
D
GS
DS
DS
=±20V
=-15V, f=1MHz
=0V, f=1MHz
=-2.6A
GS
DS
=-2A
=0V
=-15V, I
=-15V, R
=0V
=-5V
D
T
L
=-2.6A
T
J
=5.8 ,
=125° C
J
=55° C
Min
-1.4
-30
-5
3
6
-0.82
135
50.3
37.8
0.95
16.8
Typ
-1.9
166
302
3.8
6.8
2.4
1.6
7.5
3.2
6.8
97
12
17
10
A
=25° C. The
±100
www.aosmd.com
150
A
Max
130
200
370
3.1
-5
53
18
22
=25° C.
-1
-3
-1
-2
9
Units
m
m
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A