BSS192P L6327 Infineon Technologies

BSS192P L6327

Manufacturer Part Number

BSS192P L6327

Description

MOSFET P-CH 250V 190MA SOT-89

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Specifications of BSS192P L6327

Package / Case

SOT-89

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

12 Ohm @ 190mA, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

190mA

Vgs(th) (max) @ Id

2V @ 130µA

Gate Charge (qg) @ Vgs

6.1nC @ 10V

Input Capacitance (ciss) @ Vds

104pF @ 25V

Power - Max

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

12 Ohm @ 10 V

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.19 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BSS192P L6327
BSS192PL6327INTR
BSS192PL6327XT
SP000095795

Related parts for BSS192P L6327

Related keywords

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bss192p
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