BSS192P Infineon Technologies, BSS192P Datasheet

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BSS192P

Manufacturer Part Number
BSS192P
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS192P

Package
SOT-89
Vds (max)
-250.0 V
Rds (on) (max) (@10v)
12,000.0 mOhm
Rds (on) (max) (@4.5v)
15,000.0 mOhm
Rds (on) (max) (@2.5v)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS192P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSS192PH6327FTSA1
Quantity:
10 000
Part Number:
BSS192PL6327
Manufacturer:
MOTOROLA
Quantity:
6 124
Feature
SIPMOS
Type
BSS 192 P PG-SOT89
Maximum Ratings, at T
Parameter
Continuous drain current
T A =25°C
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T A =25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
JESD22-A114-HBM
ESD Class
 Qualified according to AEC Q101
A
A
P-Channel
Enhancement mode
Logic Level
dv/dt rated
=-0.19A, V
=70°C
=25°C
Rev 1.6
DS
=-200V, di/dt=-200A/µs, T
Small-Signal-Transistor
Package
j
= 25 °C, unless otherwise specified
Pb-free
Yes
jmax
=150°C
Page 1
Tape and Reel Information
Symbol
I
I
dv/dt
V
P
T
D
D puls
L6327: 1000 pcs/reel
j ,
GS
tot
T
stg
Gate
pin1
Source
pin 3
-55... +150
Drain
pin 2
55/150/56
Class 1a
Product Summary
V
R
I
D
Value
-0.19
-0.76
DS
DS(on)
±20
-0.1
6
1
3
PG-SOT89
2
BSS192P
2012-03-14
-0.19
-250
1
12
Marking
KC
Unit
A
kV/µs
V
W
°C
VPS05162
V
A
2

Related parts for BSS192P

BSS192P Summary of contents

Page 1

... I D puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT89 Drain 2 pin 2 3 Gate pin1 Source pin 3 Value -0.19 -0.1 -0.76 6 ± tot T -55... +150 stg 55/150/56 Class 1a BSS192P -250 V 12 -0. VPS05162 Marking KC Unit A kV/µ °C 2012-03-14 ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 2) Thermal resistance, junction - ambient, leaded Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µ Gate threshold voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot BSS 192 P 1.1 W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Safe operating area ...

Page 5

Typ. output characteristic parameter =25° 0.7 10V 6V A 4.6V 4V 3.6V 3.4V 0.5 3.2V 2.8V 2.6V 0.4 2.4V 0.3 0.2 0 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 192 98% 12 typ -60 - Typ. capacitances C ...

Page 7

Typ. gate charge Gate parameter -0.19 A pulsed °C D BSS 192 P -16 V -12 -10 -8 20% 50 ...

Page 8

Rev 1.6 Page 8 BSS 192 P 2012-03-14 ...

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