BSZ440N10NS3 G Infineon Technologies, BSZ440N10NS3 G Datasheet
BSZ440N10NS3 G
Specifications of BSZ440N10NS3 G
BSZ440N10NS3 GINTR
SP000482442
Related parts for BSZ440N10NS3 G
BSZ440N10NS3 G Summary of contents
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... Power-Transistor Features R R Type Package Maximum ratings, T Parameter Product Summary Marking Symbol Conditions BSZ440N10NS3 G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions BSZ440N10NS3 G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode Symbol Conditions BSZ440N10NS3 G Values Unit min. typ. max. ...
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... Power dissipation [° Safe operating area [ Drain current 120 160 0 4 Max. transient thermal impedance BSZ440N10NS3 120 160 T [° [s] p ...
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... Typ. output characteristics [ Typ. transfer characteristics [ Typ. drain-source on resistance Typ. forward transconductance BSZ440N10NS3 [ [ ...
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... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 1000 100 BSZ440N10NS3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 BSZ440N10NS3 [nC] gate ate ...
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... Package Outline: PG-TSDSON-8 BSZ440N10NS3 G ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. BSZ440N10NS3 G ...