SPD08N50C3 Infineon Technologies, SPD08N50C3 Datasheet
SPD08N50C3
Specifications of SPD08N50C3
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SPD08N50C3 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature 6) Reverse diode dv/dt Rev. 2.5 in TO-252 Ordering Code Q67040-S4569 = 25°C, unless otherwise specified jmax 1) limited jmax limited jmax Page 1 SPD08N50C3 @ jmax R DS(on PG-TO252 Marking 08N50C3 Symbol Value I D 7.6 4.6 22 puls 230 ...
Page 2
... DS I =500V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =4.6A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPD08N50C3 Value Unit 50 V/ns Values Unit min. typ. max 1.5 K 260 °C Values Unit min. typ. max. 500 - - V - ...
Page 3
... =7.6A d(off =400V, I =7. =400V, I =7.6A 10V =400V, I =7. (plateau) DD =400V, V < <T peak BR, DSS j j,max Page 3 SPD08N50C3 Values min. typ. max 750 - 350 - =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS . 2008-04-11 ...
Page 4
... /dt=100A/µ rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPD08N50C3 Values min. typ 370 = 3 700 Value typ. 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 E xternal H eatsink T case Unit max. 7.6 A 22.8 1 ...
Page 5
... C SPD08N50C3 100 Transient thermal impedance thJC p parameter K Rev. 2.5 2 Safe operating area parameter : °C 100 120 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPD08N50C3 ) DS =25° 0.001 0. 0 =25° µ 20V 10V 2008-04- 6,5V 6V 5, ...
Page 6
... SPD08N50C3 3.4 2.8 2.4 2 1.6 1.2 98% 0.8 typ 0.4 0 -60 - Rev. 2.5 6 Typ. drain-source on resistance R DS(on) parameter 5. 4. Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPD08N50C3 = =150° 4. DS(on)max = 10 µs p 25° 2008-04-11 6V 6.5V 8V 20V 150° ...
Page 7
... T j (START Rev. 2.5 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par =25° (START µ Page 7 SPD08N50C3 ) µ SPD08N50C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 260 220 200 180 160 140 120 100 100 2 ...
Page 8
... Crss 100 200 Rev. 2.5 14 Avalanche power losses P AR parameter: E 500 W 300 200 100 100 °C 180 Typ oss µJ 300 V 500 V DS Page 8 SPD08N50C3 = =0.5mJ stored energy oss ) 2.5 2 1 100 200 300 6 10 MHz f V 500 V DS 2008-04-11 ...
Page 9
... Definition of diodes switching characteristics Rev. 2.5 Page 9 SPD08N50C3 2008-04-11 ...
Page 10
... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 SPD08N50C3 2008-04-11 ...
Page 11
... Rev. 2.5 Page 11 SPD08N50C3 2008-04-11 ...