IPD90N04S3-04 Infineon Technologies, IPD90N04S3-04 Datasheet

MOSFET N-CH 40V 90A TO252-3

IPD90N04S3-04

Manufacturer Part Number
IPD90N04S3-04
Description
MOSFET N-CH 40V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD90N04S3-04

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
5200pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.8 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
90 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPD90N04S3-04
IPD90N04S3-04TR
SP000261222

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD90N04S3-04
Manufacturer:
INFINEON
Quantity:
12 000
Part Number:
IPD90N04S3-04
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPD90N04S3-04
Quantity:
1 435
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD90N04S3-04
®
-T Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
QN0404
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=90 A
page 1
=25°C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
-55 ... +175
55/175/56
Value
360
260
±20
136
90
90
PG-TO252-3-11
IPD90N04S3-04
3.6
40
90
2007-05-03
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPD90N04S3-04

IPD90N04S3-04 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking QN0404 Symbol Conditions I T =25°C, V =10V =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPD90N04S3- 3 PG-TO252-3-11 Value Unit 360 260 mJ ±20 V 136 W -55 ... +175 °C 55/175/56 2007-05-03 ...

Page 2

... Rev. 1.0 Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =90 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS(on page 2 IPD90N04S3-04 Values min. typ. max 1 2.1 3.0 4 100 = 100 - 2.9 3.6 Unit K µA nA mΩ 2007-05-03 ...

Page 3

... D G d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.1K/W the chip is able to carry 144A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD90N04S3-04 Values min. typ. max. - 4000 5200 = 1100 1400 - 170 - = 5 0. Unit pF 250 - ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 0 100 µ 100 [V] page 4 IPD90N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...

Page 5

... T j 360 320 280 240 200 160 120 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 -55 °C 25 °C 5 175 ° -60 [V] page 5 IPD90N04S3- ° 100 T [° 6 100 120 140 180 2007-05-03 ...

Page 6

... V SD Rev. 1.0 10 Typ. capacitances 900 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD90N04S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2007-05-03 ...

Page 7

... I D 1200 1000 22.5 A 800 600 45 A 400 200 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD90N04S3- -60 - 100 T [° 140 180 Q gate 2007-05-03 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD90N04S3-04 2007-05-03 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPD90N04S3-04 Changes 2007-05-03 ...

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