ZXMN10A11K Diodes Zetex, ZXMN10A11K Datasheet - Page 3

• Manufacturer Part Number: ZXMN10A11K
• Description: MOSFET N-CHAN 100V DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A11K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 50V
• Power - Max: 2.11W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A11KTR

Thermal Characteristics
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
100m
10m
100
60
50
40
30
20
10
10
10
100µ
100µ
0
1
1
Transient Thermal Impedance
R
Limited
D=0.5
D=0.2
DS(on)
25mm x 25mm
25mm x 25mm
Pulse Power Dissipation
T
1m
1m
V
1
Safe Operating Area
DC
1oz FR4
T
amb
1oz FR4
DS
amb
=25°C
=25°C
1s
Drain-Source Voltage (V)
10m 100m
10m 100m
100ms
Pulse Width (s)
Pulse Width (s)
25mm x 25mm
1oz FR4
10ms
10
1
1
1ms
50mm x 50mm
100µs
Single Pulse
10
10
Single Pulse
2oz FR4
T
D=0.05
amb
=25°C
D=0.1
100
100
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100
1k
1k
3 of 8
100m
10m
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
35
30
25
20
15
10
100µ
1
5
0
0
Transient Thermal Impedance
D=0.5
D=0.2
R
Limited
50mm x 50mm
DS(on)
50mm x 50mm
20
1m
T
V
1
2oz FR4
T
amb
DC
DS
2oz FR4
amb
=25°C
Safe Operating Area
=25°C
40
Temperature (°C)
Drain-Source Voltage (V)
10m 100m
Derating Curve
Diodes Incorporated
1s
100ms
Pulse Width (s)
A Product Line of
60
80
10ms
50mm x 50mm
10
100 120 140 160
1
2oz FR4
1ms
25mm x 25mm
Single Pulse
1oz FR4
100µs
10
D=0.05
ZXMN10A11K
D=0.1
100
© Diodes Incorporated
100
1k
January 2010