ZXMN10A11K Diodes Zetex, ZXMN10A11K Datasheet - Page 5

• Manufacturer Part Number: ZXMN10A11K
• Description: MOSFET N-CHAN 100V DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A11K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 50V
• Power - Max: 2.11W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A11KTR

Typical Characteristics
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
0.01
Typical Transfer Characteristics
100
0.1
0.1
0.1
10
10
0.01
On-Resistance v Drain Current
1
1
1
3
T = 25°C
0.1
T = 150°C
3.5V
V
V
DS
T = 25°C
Output Characteristics
GS
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
0.1
Drain Current (A)
V
GS
4
1
4V
4.5V
1
T = 25°C
V
DS
10V
= 10V
5V
V
10
5
GS
4.5V
5V
3.5V
4V
10
10V
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5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.1
10
1
-50
1
T = 150°C
0.1
0.4
V
V
Tj Junction Temperature (°C)
T = 150°C
Output Characteristics
DS
SD
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
50
10V
V
I
D
V
I
GS
D
= 2.6A
GS
= 250uA
T = 25°C
= 10V
0.8
= V
DS
100
10
R
1.0
V
5V
3.5V
ZXMN10A11K
2.5V
DS(on)
4V
3V
4.5V
GS(th)
V
GS
150
© Diodes Incorporated
January 2010