ZXMN10A11K Diodes Zetex, ZXMN10A11K Datasheet - Page 6

• Manufacturer Part Number: ZXMN10A11K
• Description: MOSFET N-CHAN 100V DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A11K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 50V
• Power - Max: 2.11W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A11KTR

Typical Characteristics - continued
Test Circuits
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
Capacitance v Drain-Source Voltage
90%
10%
V
V
DS
GS
V
G
400
300
200
100
0
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
DS
t
(on)
- Drain - Source Voltage (V)
t
1
r
C
Q
ISS
Q
G
GD
Charge
C
OSS
10
t
d(off)
C
RSS
t
(on)
V
f = 1MHz
GS
t
= 0V
r
www.diodes.com
100
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= 2.5A
12V
1
R
G
Diodes Incorporated
Q - Charge (nC)
A Product Line of
2
V
regulator
Current
GS
50k
I
G
V
3
GS
R
Same as
D.U.T
D
D.U.T
4
V
DS
V
ZXMN10A11K
DS
= 50V
5
I
V
D
© Diodes Incorporated
DS
V
January 2010
DD
6