ECH8411-TL-E SANYO, ECH8411-TL-E Datasheet - Page 2

• Manufacturer Part Number: ECH8411-TL-E
• Description: MOSFET N-CH 20V 9A ECH8
• Manufacturer: SANYO

Specifications of ECH8411-TL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 4A, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Gate Charge (qg) @ Vgs: 21nC @ 4V
• Input Capacitance (ciss) @ Vds: 1740pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1155-2

Continued from preceding page.
Package Dimensions
unit : mm
7011-002
Switching Time Test Circuit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4V
0V
PW=10 s
D.C. 1%
1
8
0.65
Bottom View
V IN
Top View
0.3
2.9
Parameter
V IN
4
5
50
G
V DD =10V
D
S
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
I D =4A
R L =2.5
ECH8411
V OUT
0.15
Symbol
V SD
Qgs
Qgd
Qg
V DS =10V, V GS =4V, I D =9A
V DS =10V, V GS =4V, I D =9A
V DS =10V, V GS =4V, I D =9A
I S =9A, V GS =0V
ECH8411
Conditions
Electrical Connection
8
1
7
2
min
6
3
Ratings
typ
0.84
3.5
6.2
5
4
21
max
Top view
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1.2
No. A0073-2/4
Unit
nC
nC
nC
V