ECH8411-TL-E SANYO, ECH8411-TL-E Datasheet - Page 4

MOSFET N-CH 20V 9A ECH8

ECH8411-TL-E

Manufacturer Part Number
ECH8411-TL-E
Description
MOSFET N-CH 20V 9A ECH8
Manufacturer
SANYO
Datasheet

Specifications of ECH8411-TL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 4A, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Gate Charge (qg) @ Vgs
21nC @ 4V
Input Capacitance (ciss) @ Vds
1740pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-ECH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Other names
869-1155-2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Note on usage : Since the ECH8411 is a MOSFET product, please avoid using this device in the vicinity
0
0
V DS =10V
I D =9A
This catalog provides information as of August, 2005. Specifications and information herein are subject
to change without notice.
2
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
20
4
Ambient Temperature, Ta -- C
40
Total Gate Charge, Qg -- nC
6
of highly charged objects.
8
60
V GS -- Qg
P D -- Ta
10
80
12
100
14
16
120
18
140
IT10112
IT10039
20
160
22
ECH8411
0.01
100
1.0
0.1
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
Operation in this
area is limited by R DS (on).
5 7
Drain-to-Source Voltage, V DS -- V
0.1
2 3
A S O
5 7
1.0
2 3
2
0.8mm)
5
PS
7
10
No. A0073-4/4
10 s
2
IT10111
3
5

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