ECH8411-TL-E SANYO, ECH8411-TL-E Datasheet - Page 3

• Manufacturer Part Number: ECH8411-TL-E
• Description: MOSFET N-CH 20V 9A ECH8
• Manufacturer: SANYO

Specifications of ECH8411-TL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 4A, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Gate Charge (qg) @ Vgs: 21nC @ 4V
• Input Capacitance (ciss) @ Vds: 1740pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1155-2

100
1.0
0.1
10
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
5
0
3
2
7
5
3
2
7
5
3
2
0.01
0.1
0
0
V DS =10V
I D =2A
0.1
2
2
3
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5
3
2
4A
7
0.3
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
5
I D -- V DS
0.4
y
7
2
fs -- I D
t d (on)
0.5
1.0
3
t f
4
5
0.6
7
2
1.0
0.7
3
6
2
0.8
V DD =10V
V GS =4V
3
Ta=25 C
5
0.9
IT10031
IT10033
IT10035
IT10037
5
7
7
ECH8411
1.0
10
10
8
0.001
1000
0.01
100
1.0
0.1
10
15
14
13
12
10
40
35
30
25
20
15
10
11
9
8
7
6
5
4
3
2
1
0
5
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
--60
0
0
0
V GS =0V
--40
2
0.2
--20
0.5
Ciss, Coss, Crss -- V DS
4
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- C
0
6
0.4
R DS (on) -- Ta
20
I D -- V GS
I S -- V SD
1.0
8
40
0.6
10
60
1.5
12
80
0.8
14
100
No. A0073-3/4
2.0
16
120
V DS =10V
1.0
f=1MHz
140
18
IT10032
IT10034
IT10036
IT10038
160
2.5
1.2
20