IRF7769L2TR1PBF International Rectifier, IRF7769L2TR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7769L2TR1PBF
• Description: MOSFET N-CH 100V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7769L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 11560pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 124 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7769L2TR1PBFTR

Fig 16. Maximum Avalanche Energy Vs. Temperature
6
280
240
200
160
120
80
40

0
25
‚
+
-
1000
100
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
50
D.U.T
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Duty Cycle = Single Pulse
TOP
BOTTOM 1% Duty Cycle
I D = 74A
75
ƒ
+
-
•
•
•
•
SD
100
•
0.01
•
•
0.05
0.10
Single Pulse
1.0E-05
Fig 15. Typical Avalanche Current Vs.Pulsewidth
125
-
G
„
150
+
175
1.0E-04
+
-
Re-Applied
Voltage
tav (sec)
Reverse
Recovery
Current
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ΔT
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 19a, 19b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
1.0E-03
av
av =
thJC
D (ave)
jmax
P.W.
SD
DS
= Allowable avalanche current.
=
Average time in avalanche.
Waveform
(D, t
Allowable rise in junction temperature, not to exceed
Waveform
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
Ripple ≤ 5%
Body Diode
P
Period
) = Transient thermal resistance, see figure 11)
D (ave)
Body Diode Forward
Diode Recovery
Current
= 1/2 ( 1.3·BV·I
I
av
E
AS (AR)
dv/dt
Forward Drop
= 2DT/ [1.3·BV·Z
di/dt
®
1.0E-02
Power MOSFETs
= P
D =
jmax
D (ave)
av
av
Period
. This is validated for
P.W.
·f
) = DT/ Z
·t
th
a
]
V
V
I
SD
thJC
GS
DD
www.irf.com
1.0E-01
=10V
*
jmax
is