IRLR3303 International Rectifier, IRLR3303 Datasheet - Page 2

• Manufacturer Part Number: IRLR3303
• Description: MOSFET N-CH 30V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3303; Q811927

IRLR/U3303
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
rr
on
S
D
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
max. junction temperature. ( See fig. 11 )
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
R
T
Pulse width 300µs; duty cycle 2%.
I
2
(BR)DSS
SD
J
DD
G
= 25 , I
= 15V, starting T
175°C
20A, di/dt 140A/µs, V
/ T
J
AS
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 20A. (See Figure 12)
J
= 25°C, L =470µH
Parameter
Parameter
DD
V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
–––
30
12
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Caculated continuous current based on maximum allowable
Uses IRL3303 data and test conditions.
This is applied for I-PAK, L
0.035 –––
junction temperature;
lead and center of die contact.
Typ. Max. Units
–––
–––
170
–––
–––
––– 0.031
––– 0.045
–––
–––
–––
–––
–––
–––
–––
–––
200
7.5
870
340
–––
180
7.4
4.5
14
36
72
-100
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
35
110
280
8.8
–––
1.3
25
26
15
140
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 20A
= 20A
= 25°C, I
Package limitation current = 20A.
= 25°C, I
= 0.70
= 6.5
= 0V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 4.5V, See Fig. 6 and 13
= 15V
= 25V
= 10V, I
= 4.5V, I
= 16V
= -16V
= 0V
S
of D-PAK is measured between
GS
, I
D
V
F
S
D
D
D
See Fig. 10
= 250µA
GS
D
Conditions
Conditions
GS
GS
= 20A
= 20A, V
= 250µA
= 20A
= 21A
= 17A
= 4.5V
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V
G
G
S
+L
D
D
S
)
S
D