IRLR3303 International Rectifier, IRLR3303 Datasheet - Page 5

• Manufacturer Part Number: IRLR3303
• Description: MOSFET N-CH 30V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3303; Q811927

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35
30
25
20
15
10
5
0
0.01
Fig 9. Maximum Drain Current Vs.
25
0.1
10
0.00001
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D = t / t
2. Peak T = P
Notes:
4.5V
V
GS
t
r
V
J
DS
0.01
IRLR/U3303
µs
DM
x Z
1
thJC
D.U.T.
P
2
DM
t
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
0.1
DD
5