IRLR3303 International Rectifier, IRLR3303 Datasheet - Page 6

• Manufacturer Part Number: IRLR3303
• Description: MOSFET N-CH 30V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3303; Q811927

IRLR/U3303
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
10 V
I
A S
V
G
R G
2 0 V
V D S
Q
GS
t p
I A S
t p
D .U .T
0 .0 1
L
Q
Charge
Q
GD
G
V
(B R )D SS
1 5 V
D R IV E R
+
-
V D D
A
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
5 0
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
2 5
V
V
GS
D D
S tarting T , J unc tion T em perature (°C )
Same Type as D.U.T.
= 15 V
Current Regulator
5 0
.2 F
Vs. Drain Current
50K
3mA
J
Current Sampling Resistors
7 5
.3 F
I
G
1 0 0
D.U.T.
1 2 5
I
www.irf.com
D
TO P
B O TTO M
+
-
1 5 0
V
DS
14 A
2 0A
8.3 A
I
D
1 7 5
A