IRLR3303 International Rectifier, IRLR3303 Datasheet - Page 4

MOSFET N-CH 30V 35A DPAK

IRLR3303

Manufacturer Part Number
IRLR3303
Description
MOSFET N-CH 30V 35A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3303

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3303
Q811927

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IRLR/U3303
1 0 0 0
4
1 0 0
1 6 0 0
1 4 0 0
1 2 0 0
1 0 0 0
1 0
8 0 0
6 0 0
4 0 0
2 0 0
1
0.0
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 17 5°C
V
C
C
C
J
V
S D
iss
oss
rss
0.5
D S
, S ourc e-to-D rain V oltage (V )
Forward Voltage
V
C
C
C
, D rain-to-S ource V oltage (V )
G S
is s
rs s
o ss
= 0V ,
= C
= C
= C
1.0
T = 25 °C
g s
d s
J
g d
+ C
+ C
1 0
g d
gd
1.5
f = 1M H z
, C
d s
S H O R T E D
2.0
V
G S
= 0V
2.5
1 0 0
A
A
1 0 0 0
1 0 0
1 5
1 2
1 0
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
S ing le P u lse
D
C
J
= 2 0A
= 25 °C
= 17 5°C
Gate-to-Source Voltage
O P E R A TIO N IN TH IS A R E A L IM ITE D
Fig 8. Maximum Safe Operating
V
D S
Q , T otal G ate C harge (nC )
1 0
G
, D rain-to-S ource V oltage (V )
B Y R
V
V
2 0
1 0
D S
D S
D S (o n)
Area
= 24 V
= 15 V
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
www.irf.com
3 0
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
1 0 0
4 0
A
A

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