SPI21N10 Infineon Technologies, SPI21N10 Datasheet
SPI21N10
Specifications of SPI21N10
SPI21N10
SPI21N10IN
SPI21N10X
SPI21N10XK
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SPI21N10 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Preliminary data P-TO262-3-1 P-TO263-3-2 Ordering Code Marking Q67042-S4116 21N10 Q67042-S4102 21N10 Q67042-S4117 21N10 Symbol puls E AS dv/dt =175°C jmax tot stg Page 1 SPI21N10 SPP21N10,SPB21N10 Product Summary V 100 DS(on P-TO220-3-1 Value Unit A 21 15.0 84 130 mJ 6 kV/µs V ± ° ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Preliminary data Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 SPI21N10 SPP21N10,SPB21N10 Values Unit min. typ. max 1.7 K Values Unit min. typ. max. 100 ...
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... I =21A d(off =80V, I =21A =80V, I =21A 10V GS V (plateau) V =80V, I =21A =25° =0V, I =21A =50V /dt=100A/µ Page 3 SPI21N10 SPP21N10,SPB21N10 Values Unit min. typ. max. 6.5 12 650 865 pF - 140 186 - 80 120 - 3.9 5 15.5 23.3 - 28.9 38 0. 153 192 ...
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... C 2 SPP21N10 Preliminary data 2 Drain current parameter: V SPP21N10 °C 190 Transient thermal impedance thJC p parameter : 6.8µs 1 SPP21N10 10 K/W 10 µ 100 µ Page 4 SPI21N10 SPP21N10,SPB21N10 100 120 140 160 ° 0.50 0.20 0.10 0.05 0.02 single pulse 0. 2002-01-31 190 0 10 ...
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... Typ. transfer characteristics parameter µ Preliminary data 6 Typ. drain-source on resistance DS(on) parameter: V 260 [V 5.6 b= 6.0 220 c= 7.0 200 d= 8.0 e= 10.0 180 c 160 140 120 100 Typ. forward transconductance DS(on)max fs D parameter Page 5 SPI21N10 SPP21N10,SPB21N10 ) [V]= c= 7.0 d= 8.0 a= 5.6 e= 10 =25° 2002-01- ...
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... Typ. gate threshold voltage GS(th parameter 2.5 2 1.5 140 °C 200 - Forward character. of reverse diode parameter SPP21N10 iss oss rss - Page 6 SPI21N10 SPP21N10,SPB21N10 = =0.25mA D I =44µ 115 ° µ °C typ 175 °C typ °C (98 175 °C (98%) j 0.4 0.8 1.2 1 ...
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... Drain-source breakdown voltage (BR)DSS j SPP21N10 120 V 114 112 110 108 106 104 102 100 -60 - 100 Preliminary data 14 Typ. gate charge Gate = 25 parameter SPP21N10 145 185 0 5 ° 140 °C 200 T j Page 7 SPI21N10 SPP21N10,SPB21N10 ) = 21 A pulsed D V 0,2 DS max 0 max Gate 2002-01-31 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 SPI21N10 SPP21N10,SPB21N10 2002-01-31 ...