TPCA8026(TE12L,Q,M Toshiba, TPCA8026(TE12L,Q,M Datasheet

TPCA8026(TE12L,Q,M

Manufacturer Part Number

TPCA8026(TE12L,Q,M

Description

MOSFET N-CH 30V 45A 8-SOP ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8026TE12LQM.pdf (7 pages)

Specifications of TPCA8026(TE12L,Q,M

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.2 mOhm @ 23A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

45A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

113nC @ 10V

Input Capacitance (ciss) @ Vds

4200pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0022 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

45 A

Power Dissipation

45 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TPCA8026TE12LQMTR

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Lithium-Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25℃)

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

(Tc = 25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

= 1.3 to 2.5 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 10 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

TPCA8026

DGR

GSS

DSS

| =100 S (typ.)

stg

= 1.8 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

±20

135

263

150

2.8

1.6

3.4

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3: SORCE

5,6,7,8:DRAIN

1.27

0.05

4.25 ± 0.2

5.0 ± 0.2

0.4 ± 0.1

2-5Q1A

TPCA8026

4: GATE

2008-06-26

⎯

0.05 M

0.15 ± 0.05

0.595

Unit: mm

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TPCA8026(TE12L,Q,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient ( Thermal resistance, channel to ambient ( Marking (Note 5) TPCA Part number 8026 ∗ Lot No. Note 1: Ensure that ...

Page 3

Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...

Page 4

I – 3.6 3 4.5 5 Common source 25°C 30 Pulse test 2 0.2 0.4 0.6 0.8 Drain − source voltage ...

Page 5

R – (ON) 8 Common source Pulse test 12 12, 23 −80 −40 ...

Page 6

Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) ( 25℃ 100 10 1 0.1 0.001 0.01 P – (1) Device mounted on ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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