TPCA8026(TE12L,Q,M Toshiba, TPCA8026(TE12L,Q,M Datasheet - Page 5

• Manufacturer Part Number: TPCA8026(TE12L,Q,M
• Description: MOSFET N-CH 30V 45A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8026(TE12L,Q,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8026TE12LQMTR

10000
1000
100
50
40
30
20
10
10
−80
0
8
6
4
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V DS
Common source
I D = 40 A
Ta = 25°C
Pulse test
V GS = 4.5 V
V GS = 10 V
20
Drain − source voltage V
−40
Ambient temperature Ta (
Total gate charge Q
40
Dynamic input/output
Capacitance – V
60
0
1
characteristics
R
V DD = 6V
DS (ON)
80
V GS
40
100
– Ta
24
120
I D = 12, 23, 45 A
80
10
g
DS
I D = 12, 23, 45 A
DS
(nC)
140
12
°
C)
(V)
120
C iss
C oss
C rss
160
180
160
100
20
16
12
8
4
0
5
1000
100
0.1
2.5
1.5
0.5
10
3
−80
0
1
2
1
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
10
Drain − source voltage V
−40
Ambient temperature Ta (
−0.2
0
−0.4
4.5
I
DR
V
th
– V
40
– Ta
DS
−0.6
3
80
DS
Common source
Ta = 25°C
Pulse test
1
−0.8
V GS = 0 V
°
(V)
120
C)
TPCA8026
2008-06-26
160
−1