IRF530NSTRLPBF International Rectifier, IRF530NSTRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRF530NSTRLPBF
• Description: MOSFET N-CH 100V 17A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF530NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF530NSTRLPBF; IRF530NSTRLPBFTR

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100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
0.1
4.0
TOP
BOTTOM
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
5.0
, Gate-to-Source Voltage (V)
1
T = 25 C
J
6.0
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
°
J
DS
10
= 50V
T = 175 C
J
7.0
°
°
100
8.0
100
Fig 2. Typical Output Characteristics
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
15A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
°
GS
=
10V
3
100