IRF530NSTRLPBF International Rectifier, IRF530NSTRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF530NSTRLPBF
• Description: MOSFET N-CH 100V 17A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF530NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF530NSTRLPBF; IRF530NSTRLPBFTR

www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
For N-channel
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
Diode Recovery
Current
HEXFET
dv/dt
Forward Drop
•
•
•
di/dt
®
power MOSFETs
D =
-
Period
„
P.W.
+
[
[
V
V
I
SD
GS
DD
]
=10V
+
-
] ***
7