IPB80N04S3-03 Infineon Technologies, IPB80N04S3-03 Datasheet
IPB80N04S3-03
Specifications of IPB80N04S3-03
IPB80N04S3-03TR
SP000260848
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IPB80N04S3-03 Summary of contents
Page 1
... Product Summary DS(on),max I D PG-TO263-3-2 Marking 3N0403 3N0403 3N0403 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 40 (SMD version) 3.2 80 PG-TO262-3-1 PG-TO220-3-1 Value Unit 320 526 mJ ±20 V 188 W -55 ... +175 °C 55/175/56 2007-05- ...
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... (BR)DSS =120 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Values min. typ. max 0 2.1 3.0 4 100 = 100 - 2.8 3.5 - 2.5 3.2 Unit K µA nA mΩ 2007-05-03 ...
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... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.8K/W the chip is able to carry 182A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Values min. typ. max. - 5600 7300 = 1540 2000 - 240 - = 5 Unit pF 350 ...
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... V DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...
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... V GS Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 5 -55 °C 25 °C 4 175 ° -60 [V] page 5 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3- °C; SMD 5 6 160 240 I [ SMD - 100 T [° 320 140 180 2007-05-03 ...
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... V SD Rev. 1.0 10 Typ. capacitances 1200 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 1 0.8 1 1.2 1.4 [V] page 6 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2007-05-03 ...
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... A 1500 1000 40 A 500 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th 100 [nC] page 7 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3- -60 - 100 T [° 140 180 Q gate 2007-05-03 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI80N04S3-03, IPP80N04S3-03 page 8 IPB80N04S3-03 2007-05-03 ...
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... Revision History Version Rev. 1.0 Date page 9 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Changes 2007-05-03 ...