SUM40N10-30-E3 Vishay, SUM40N10-30-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM40N10-30-E3
• Description: MOSFET N-CH 100V 40A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM40N10-30-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 34mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM40N10-30-E3; SUM40N10-30-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72134
S-80272-Rev. B, 11-Feb-08
3000
2400
1800
1200
600
100
75
60
45
30
15
80
60
40
20
0
0
0
0
0
0
T
C
= - 55 °C
20
15
C
2
V
V
rss
DS
DS
Output Characteristics
V
Transconductance
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
GS
I
D
Capacitance
- Drain Current (A)
= 10 thru 6 V
40
30
4
C
C
oss
iss
60
45
6
80
60
8
25 °C
125 °C
5 V
4 V
100
10
75
0.08
0.06
0.04
0.02
0.00
20
16
12
75
60
45
30
15
8
4
0
0
0
0
0
V
I
D
DS
= 40 A
10
On-Resistance vs. Drain Current
= 50 V
1
15
V
Transfer Characteristics
Q
GS
20
g
- Total Gate Charge (nC)
- Gate-to-Source Voltage (V)
I
2
D
Gate Charge
V
- Drain Current (A)
30
GS
30
SUM40N10-30
T
= 6 V
C
25 °C
Vishay Siliconix
3
= 125 °C
40
45
V
4
GS
50
www.vishay.com
= 10 V
60
5
- 55 °C
60
70
75
6
3