SUM40N10-30-E3 Vishay, SUM40N10-30-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM40N10-30-E3
• Description: MOSFET N-CH 100V 40A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM40N10-30-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 34mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM40N10-30-E3; SUM40N10-30-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72134
S-80272-Rev. B, 11-Feb-08
0.01
0.1
50
40
30
20
10
2
1
0
10
0
-4
http://www.vishay.com/ppg?72134.
Single Pulse
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
0.2
0.1
25
0.02
T
0.05
C
vs. Case Temperature
50
- Ambient Temperature (°C)
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
Square Wave Pulse Duration (s)
175
10
-2
1000
100
0.1
10
1
0.1
* V
by r
GS
Limited
DS(on) *
V
minimum V
DS
1
10
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
C
-1
= 25 °C
GS
SUM40N10-30
10
at which r
Vishay Siliconix
DS(on)
100
www.vishay.com
is specified
10 µs
100 µs
1 ms
10 ms
DC, 100 ms
1
1000
5